Noise Models for MOSFETs in Saturation
نویسندگان
چکیده
Progress in CMOS device technology has motivated the design of high-performance analog integrated circuits in standard CMOS processes. In particular, the high speed of submicron CMOS devices make them attractive for a variety of analog applications, including data converters, switched capacitor circuits, and low noise amplifiers [1,2,16]. However, recent reports have indicated that the measured noise in short-channel MOSFET devices is greater than the amount predicted by long-channel theory [3,4,5]. In order to predict the noise performance of analog circuits designed using shortchannel MOSFET devices, an accurate noise model is imperative. In this work, a MOSFET noise model is presented which matches well with observed data. This model accounts for the effect of high fields on the thermal noise of the device as well as the effect of substrate shot noise on the total noise current.
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